型号:

STD7NM60N

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 600V 5A DPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
STD7NM60N PDF
其它有关文件 STD7NM60N View All Specifications
标准包装 2,500
系列 MDmesh™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 5A
开态Rds(最大)@ Id, Vgs @ 25° C 900 毫欧 @ 2.5A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 14nC @ 10V
输入电容 (Ciss) @ Vds 363pF @ 50V
功率 - 最大 45W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 D-Pak
包装 带卷 (TR)
其它名称 497-11042-2
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